| DESIGN FUNCTION AND QUANTITY | 1 MEMORY |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND PROGRAMMABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL MEMORY-PROGRAMMED EPROM |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | ALTERED ITEM/BUILT FROM 5962-86063 |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM INPUT AND 6.5 VOLTS MAXIMUM INPUT |
| STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |