| FEATURES PROVIDED | MONOLITHIC AND ULTRAVIOLET ERASABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 550.0 MILLIWATTS |
| MEMORY DEVICE TYPE | PROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE, PROM, MONOLITHIC SILICON |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS NOMINAL ACCESS |