| MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| DESIGN FUNCTION AND QUANTITY | 1 MEMORY, DYNAMIC RAM |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MINIMUM ACCESS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 72 PRINTED CIRCUIT |
| INCLOSURE CONFIGURATION | SINGLE-IN-LINE |
| INCLOSURE MATERIAL | PLASTIC |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | DRAM UPGRADE 64 MEG COMPOSED OF 2EA 32 MEG DRAM SIMMS |
| CRITICALITY CODE JUSTIFICATION | CBBL |
| OVERALL HEIGHT | 1.000 INCHES MAXIMUM |