| OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS ALL MEMORY |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC ALL MEMORY |
| OVERALL HEIGHT | 1.075 INCHES MAXIMUM |
| OVERALL LENGTH | 4.255 INCHES MAXIMUM |
| OVERALL WIDTH | 0.360 INCHES MAXIMUM |
| SPECIAL FEATURES | 72-CONTACT SINGLE IN-LINE MEMORY MODULE W/ SIXTEEN 128K WORD X 8 BIT MEMORY CHIPS MOUNTED |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE ERR-100 AND 2.2 VOLTS MINIMUM INPUT LOGIC 1 ERR-100 AND 0.8 VOLTS MAXIMUM INPUT LOGIC 0 ERR-100 AND 2.4 VOLTS MINIMUM OUTPUT LOGIC HIGH ERR-100 AND 0.4 VOLTS MAXIMUM OUTPUT LOGIC LOW ERR-100 |
| TERMINAL TYPE AND QUANTITY | 32 J-HOOK ALL MEMORY |
| TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS MAXIMUM ACCESS ALL MEMORY |
| DESIGN FUNCTION AND QUANTITY | 1 MEMORY, RANDOM ACCESS ALL MEMORY |
| COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| CRITICALITY CODE JUSTIFICATION | CBBL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND W/COMMON ENABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE ALL MEMORY |
| INCLOSURE MATERIAL | PLASTIC ALL MEMORY |
| INPUT CIRCUIT PATTERN | 19 INPUT ALL MEMORY AND 1 INPUT ALL MEMORY AND 1 INPUT ALL MEMORY AND 1 INPUT ALL MEMORY |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | IC, 512K X 32 RAM SIMM, NAME OF WHOLE ASSY |
| PROPRIETARY CHARACTERISTICS | PACS |
| MEMORY CAPACITY | 512K X 32 |
| MEMORY DEVICE TYPE | RAM ERR-100 ERR-100 |
| MICROCIRCUIT DEVICE TYPE AND QUANTITY | 1 MEMORY |