| CRITICALITY CODE JUSTIFICATION | CBBL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND SYNCHRONOUS AND PARALLEL OPERATION |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,CMOS,1K X 8 PARALLEL SYNCHRONOUS FIFO,MONOLITHIC SILICON |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | DESCRIPTIVE DESIGNATOR CDIP3-T28 OR GDIP4-T28 |
| STORAGE TEMP RANGE | -65.0 TO 135.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS NOMINAL ACCESS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY |