| FEATURES PROVIDED | MONOLITHIC AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | PIN GRID ARRAY |
| INCLOSURE MATERIAL | CERAMIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY CAPACITY | 32,768 WORD QUANTITY AND 256 BIT QUANTITY |
| MEMORY DEVICE TYPE | EEPROM |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | DIGITAL CMOS 32K X 8 EEPROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | ENDURANCE: 10,000CYCLES/BYTE (MIN) |
| TERMINAL TYPE AND QUANTITY | 28 PIN |
| TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS NOMINAL ACCESS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |