| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
| INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| INCLOSURE MATERIAL | CERAMIC |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 495.0 MILLIWATTS |
| MEMORY DEVICE TYPE | RAM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
| TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |