| CRITICALITY CODE JUSTIFICATION | CBBL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| INCLOSURE MATERIAL | SILICON |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | EEPROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| SPECIAL FEATURES | 10 MS WRITE SPEED, BYTE/PAGE WRITE MODE, DATA POLLING/TOGGLE BIT END OFWRITE INDICATOR, 10,000 CYCLES ENDURANCE |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUITS, MEMORY, DIGITAL, CMOS 32K X 8 EEPROM, MONOLITHIC SILICON |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM TOTAL SUPPLY AND 6.3 VOLTS MAXIMUM TOTAL SUPPLY |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
| TEST DATA DOCUMENT | 96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS NOMINAL ACCESS |