| CASE OUTLINE SOURCE AND DESIGNATOR | D-1 MIL-M-38510 |
| DESIGN FUNCTION AND QUANTITY | 4 GATE, BUFFER |
| FEATURES PROVIDED | BIPOLAR AND TESTED TO MIL-STD-883 AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | BIPOLAR CMOS, QUADRUPLE BUS BUFFER GATES W/3-STATE OUTPUTS |
| MAXIMUM POWER DISSIPATION RATING | 481.0 MILLIWATTS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | TIN |
| TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |