| CASE OUTLINE SOURCE AND DESIGNATOR | F-9 MIL-M-38510 |
| FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| MEMORY DEVICE TYPE | ROM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 FLAT LEADS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM DELAY |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |