| CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| FEATURES PROVIDED | BIPOLAR AND PROGRAMMED AND TESTED TO MIL-STD-883 |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 16 INPUT |
| OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| MAXIMUM POWER DISSIPATION RATING | 300.0 MILLIWATTS |
| MEMORY DEVICE TYPE | PAL |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | PROGRAMMED ARRAY LOGIC |
| SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510 GOVERNMENT SPECIFICATION AND 67268-8506503RA GOVERNMENT STANDARD |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM APPLIED AND 5.5 VOLTS MAXIMUM APPLIED |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |