| MEMORY DEVICE TYPE | EPROM |
| OPERATING TEMP RANGE | +0.0 TO 70.0 CELSIUS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.6 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 125.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM ACCESS |
| BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.187 INCHES MAXIMUM |
| BODY LENGTH | 1.435 INCHES MINIMUM AND 1.485 INCHES MAXIMUM |
| BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| CAPITANCE RATING PER CHARACTERISTIC | 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM SUPPLY |
| FEATURES PROVIDED | HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/INHIBIT AND MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC OR GLASS OR METAL |
| INPUT CIRCUIT PATTERN | 17 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |