| BODY HEIGHT | 0.185 INCHES MAXIMUM |
| BODY LENGTH | 0.840 INCHES MAXIMUM |
| BODY WIDTH | 0.310 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 12 INPUT |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
| OVERALL LENGTH | 0.840 INCHES MAXIMUM |
| OVERALL WIDTH | 0.320 INCHES MAXIMUM |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |