| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MAXIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| BODY HEIGHT | 0.205 INCHES MAXIMUM |
| BODY LENGTH | 1.285 INCHES MAXIMUM |
| BODY WIDTH | 0.600 INCHES MAXIMUM |
| FEATURES PROVIDED | ERASABLE AND W/ENABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT AND PROGRAMMABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 14 INPUT |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM POWER DISSIPATION RATING | 790.0 MILLIWATTS |
| MEMORY CAPACITY | UNKNOWN |