| BODY HEIGHT | 0.180 INCHES MAXIMUM |
| BODY LENGTH | 1.290 INCHES MAXIMUM |
| BODY WIDTH | 0.595 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED AND ERASABLE AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 21 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 840.0 MILLIWATTS |
| MEMORY CAPACITY | UNKNOWN |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | +0.0 TO 70.0 CELSIUS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |