| FEATURES PROVIDED | MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 10 INPUT |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -0.0/+75.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 05869-726009 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |