| BODY HEIGHT | 0.105 INCHES MINIMUM AND 0.145 INCHES MAXIMUM |
| BODY LENGTH | 0.810 INCHES MAXIMUM |
| BODY WIDTH | 0.270 INCHES MINIMUM AND 0.305 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED AND 3-STATE OUTPUT AND LOW POWER AND W/ENABLE AND MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 13 INPUT |
| MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| MEMORY DEVICE TYPE | RAM |
| MEMORY CAPACITY | UNKNOWN |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| OVERALL HEIGHT | 0.365 INCHES MAXIMUM |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 18.3 VOLTS MAXIMUM POWER SOURCE |