| BODY HEIGHT | 0.180 INCHES MAXIMUM |
| BODY LENGTH | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| BODY WIDTH | 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| DESIGN FUNCTION AND QUANTITY | 2 BUFFER, NAND |
| FEATURES PROVIDED | HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | DUAL 4 INPUT |
| MAXIMUM POWER DISSIPATION RATING | 2.0 MILLIWATTS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| SPECIFICATION/STANDARD DATA | 30377-23104 MANUFACTURERS SOURCE CONTROL |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TIME RATING PER CHACTERISTIC | 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |