| CASE OUTLINE SOURCE AND DESIGNATOR | D-1 MIL-M-38510 |
| DESIGN FUNCTION AND QUANTITY | 4 GATE, NAND |
| FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| INPUT CIRCUIT PATTERN | QUAD 2 INPUT |
| OPERATING TEMP RANGE | +0.0 TO 70.0 CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 198.0 MILLIWATTS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TIME RATING PER CHACTERISTIC | 4.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |