| CAPACITANCE RATING IN PICOFARADS | 7.6 NOMINAL AND 10.0 MAXIMUM FIRST SEMICONDUCTOR DEVICE DIODE |
| CAPACITANCE RATING IN PICOFARADS | 7.6 NOMINAL AND 10.0 MAXIMUM SECOND SEMICONDUCTOR DEVICE DIODE |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 200.0 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC FIRST SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 200.0 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC SECOND SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | VERY HIGH SPEED |
| FUNCTION FOR WHICH DESIGNED | SWITCHING AND DETECTOR |
| OVERALL HEIGHT | 0.89 INCHES MINIMUM AND 1.11 INCHES MAXIMUM |
| OVERALL LENGTH | 2.80 INCHES MINIMUM AND 3.04 INCHES MAXIMUM |
| OVERALL WIDTH | 2.10 INCHES MINIMUM AND 2.64 INCHES MAXIMUM |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | DIODE, SCHOTTKY BARRIER |
| MATERIAL | PLASTIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 3 |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 225.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC FIRST SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 225.0 MILLIWATTS NOMINAL FORWARD POWER DISSIPATION, DC SECOND SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC FIRST SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE, DC SECOND SEMICONDUCTOR DEVICE DIODE |