| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE PHOTO |
| CURRENT RATING PER CHARACTERISTIC | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK FIRST SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK SECOND SEMICONDUCTOR DEVICE DIODE |
| FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR AND ZENER DIODE |
| OVERALL HEIGHT | 0.039 INCHES NOMINAL |
| OVERALL LENGTH | 0.114 INCHES NOMINAL |
| OVERALL WIDTH | 0.094 INCHES NOMINAL |
| MATERIAL | PLASTIC ENCLOSURE |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION FIRST SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION SECOND SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON SECOND SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON FIRST SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC FIRST SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC SECOND SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |