| CURRENT RATING PER CHARACTERISTIC | 10.0 MILLIAMPERES MAXIMUM EMITTER CURRENT, INSTANTANEOUS |
| OVERALL LENGTH | 0.895 INCHES MINIMUM AND 0.906 INCHES MAXIMUM |
| MATERIAL | CERAMIC ENCLOSURE |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF AND MICROWAVE TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 583.0 WATTS NOMINAL TOTAL POWER DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON ALLOY |
| SPECIAL FEATURES | DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN; APPLICATIONS; 200 W (TYP.) IFF 1030 - 1090 MHZ; 150 W (MIN.) DME 1025 - 1150 MHZ; 140 W (TYP.) TACAN 960 - 1215 MHZ; 8.2 DB GAIN; REFRACTORY GOLD METALLIZATION; BALLASTING ANDLOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS; 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS; |