| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| INCLOSURE MATERIAL | GLASS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | SEMICONDUCTOR DEVICE |
| POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | JAN1X1N649-9 WITH LUGS AND SLEEVING ADDED BY MFGR. |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 220.0 MINIMUM BREAKOVER VOLTAGE, DC AND 600.0 NOMINAL REVERSE VOLTAGE, AVERAGE |
| TERMINAL CIRCLE DIAMETER | 0.144 INCHES NOMINAL |
| TERMINAL LENGTH | 0.750 INCHES MINIMUM AND 1.000 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 INSULATED WIRE LEAD W/TERMINAL LUG |
| CAPACITANCE RATING IN PICOFARADS | 9.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | 400.0 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| FEATURES PROVIDED | INSULATOR |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER |