| CURRENT RATING PER CHARACTERISTIC | 100.0 NANOAMPERES NOMINAL COLLECTOR CUTOFF CURRENT, DC, BASE OPEN AND 500.0 NANOAMPERES NOMINAL COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND 0.5 MILLIAMPERES NOMINAL COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER AND 100.0 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| OVERALL WIDTH | 0.099 INCHES MINIMUM AND 0.118 INCHES MAXIMUM |
| MATERIAL | GLASS ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR |
| MOUNTING FACILITY QUANTITY | 3 |
| MOUNTING METHOD | PRESS FIT |
| OVERALL HEIGHT | 0.039 INCHES MINIMUM AND 0.051 INCHES MAXIMUM |
| OVERALL LENGTH | 0.106 INCHES MINIMUM AND 0.122 INCHES MAXIMUM |
| SPECIAL FEATURES | 3000 UNITS TO A REEL FROM ON SEMICONDUCTOR, SMALLER QUANTITIES MAY BE ORDERED THROUGH MOUSER ELECTRONICS CAGE 1JN02 AND P/N 863-MUN2211T1G, ROHS COMPLIANT -LEAD FREE |
| POWER RATING PER CHARACTERISTIC | 230.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| TERMINAL LENGTH | 0.024 INCHES MINIMUM AND 0.025 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 NOMINAL COLLECTOR TO BASE VOLTAGE, DC AND 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 0.25 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 0.2 NOMINAL ON-STATE VOLTAGE, DC AND 4.90 NOMINAL OFF-STATE VOLTAGE, DC |