| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| CURRENT RATING PER CHARACTERISTIC | 10.0 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
| FUNCTION FOR WHICH DESIGNED | PROGRAMMABLE TRANSISTOR |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | RF POWER FIELD EFFECT TRANSISTOR |
| MATERIAL | GLASS ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS CASE AND 200.0 CELSIUS JUNCTION |
| OVERALL HEIGHT | 0.147 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL LENGTH | 1.335 INCHES MINIMUM AND 1.345 INCHES MAXIMUM |
| OVERALL WIDTH | 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | 90.0 WATTS NOMINAL CW POWER |
| SPECIAL FEATURES | TECH DATA SHOWS THIS ITEM WAS NO LONGER MANUFACTURED SINCE 2010; IN TAPE AND REEL, R3 SUFFIX =250 UNITS PER 56MM, 13 INCH REEL; ROHS COMPLIANT; DESIGNED FOR GSM AND GSM EDGE BASE STATION APPLICATIONS WITH FREQUENCIES FROM 1800 TO 2000 MHZ; DESIGNED FOR MAX GAIN AND INSERTION PHASE FLATNESS; SUITABLE FOR FM, TDMA, CDMA AND MULTICARRIER AMPLIFIER APPLICATIONS; TO BE USED IN CLASS AB FOR GSM AND GSM EDGE CELLULAR RADIO APPLICATIONS; INTEGRATED ESD PROTECTIONS; HIGH EFFICIENCY; HIGH LINEARITY |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -0.5 MINIMUM DRAIN TO SOURCE VOLTAGE AND 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |