| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 625.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT ALL SEMICONDUCTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT143 |
| OVERALL HEIGHT | 1.100 INCHES MAXIMUM |
| OVERALL LENGTH | 2.800 INCHES MINIMUM AND 3.000 INCHES MAXIMUM |
| OVERALL WIDTH | 1.200 INCHES MINIMUM AND 1.400 INCHES MAXIMUM |
| MATERIAL | PLASTIC ENCLOSURE |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR |
| SPECIAL FEATURES | TERMINALS ARE GULLWING CONFIGURATION, SURFACE MOUNT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR |
| TERMINAL TYPE AND QUANTITY | 4 BONDING PAD |