COMPONENT NAME AND QUANTITY | 15 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM REVERSE SUPRESSION VOLTAGE AND |
| 13.3 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR |
CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND |
| 2.00 MICROAMPERES MAXIMUM DRAIN CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS AMBIENT AIR AND |
| 150.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | CERAMIC |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.165 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 16 PIN |
OVERALL LENGTH | 0.895 INCHES MINIMUM AND |
| 0.925 INCHES MAXIMUM |
OVERALL HEIGHT | 0.192 INCHES MAXIMUM |
OVERALL WIDTH | 0.450 INCHES MINIMUM AND |
| 0.480 INCHES MAXIMUM |
FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
SPECIAL FEATURES | THE H1 IN THE P/N REPRESENTS 100% JANTX LEVEL SCREENING |