| CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | P-CHANNEL JUNCTION TYPE ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 2.00 NANOAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT WATTS ALL TRANSISTOR |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| INCLOSURE MATERIAL | PLASTIC ALL TRANSISTOR |
| PROPRIETARY CHARACTERISTICS | PACS |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| OVERALL HEIGHT | 0.175 INCHES MINIMUM ALL TRANSISTOR AND 0.185 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL LENGTH | 0.175 INCHES MINIMUM ALL TRANSISTOR AND 0.185 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL WIDTH | 0.135 INCHES MINIMUM ALL TRANSISTOR AND 0.145 INCHES MAXIMUM ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| SPECIFICATION/STANDARD DATA | 4J977-011-0009 MANUFACTURERS SPECIFICATION |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL TRANSISTOR |