| CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 3.00 AMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| III SEMICONDUCTOR MATERIAL | SILICON |
| INCLOSURE MATERIAL | PLASTIC AND METAL |
| POWER RATING PER CHARACTERISTIC | 12.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD |
| OVERALL HEIGHT | 25.0 MILLIMETERS MINIMUM |
| OVERALL LENGTH | 17.15 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 25.0 MILLIMETERS MINIMUM |
| SPECIAL FEATURES | CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |