| COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.390 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 0.5 WATTS MAXIMUM PULSE RF POWER ALL SEMICONDUCTOR DEVICE DIODE |
| CAPACITANCE RATING IN PICOFARADS | 0.17 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.070 INCHES NOMINAL |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| SPECIAL FEATURES | COMPONENT SHALL CONSIST OF A SET OF FOUR DIODES WITH FORWARD VOLTAGES MATCHED WITHIN +/- 3.0 MILLIVOLTS AT 10.0 MILLIAMPERES |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |