| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| FUNCTION FOR WHICH DESIGNED | TUNNEL DIODE |
| OVERALL HEIGHT | 0.135 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.325 INCHES MINIMUM AND 0.335 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 0.245 INCHES MINIMUM AND 0.251 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 50.0 MILLIWATTS MAXIMUM CW POWER ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| SPECIAL FEATURES | FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE |
| TERMINAL TYPE AND QUANTITY | 2 PIN ALL SEMICONDUCTOR DEVICE DIODE |
| TEST DATA DOCUMENT | 30003-704AS11964 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |