| COMPONENT NAME AND QUANTITY | 20 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| OVERALL HEIGHT | 0.325 INCHES MAXIMUM |
| OVERALL LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| OVERALL WIDTH | 0.200 INCHES MAXIMUM |
| MATERIAL | CERAMIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR |
| MOUNTING METHOD | TERMINAL |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| POWER RATING PER CHARACTERISTIC | 450.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR |
| TERMINAL TYPE AND QUANTITY | 14 PIN |