| COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE AND 3 SEMICONDUCTOR DEVICE THYRISTOR |
| CURRENT RATING PER CHARACTERISTIC | 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE FIRST SEMICONDUCTOR DEVICE THYRISTOR |
| CURRENT RATING PER CHARACTERISTIC | 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE SECOND SEMICONDUCTOR DEVICE DIODE |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| OVERALL HEIGHT | 21.000 INCHES NOMINAL |
| OVERALL LENGTH | 27.000 INCHES NOMINAL |
| OVERALL WIDTH | 27.000 INCHES NOMINAL |
| MATERIAL | CERAMIC ENCLOSURE |
| MOUNTING METHOD | PRESS FIT |
| POWER RATING PER CHARACTERISTIC | 41.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION FIRST SEMICONDUCTOR DEVICE THYRISTOR |
| POWER RATING PER CHARACTERISTIC | 41.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION SECOND SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON FIRST SEMICONDUCTOR DEVICE THYRISTOR |
| SEMICONDUCTOR MATERIAL | SILICON SECOND SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE FIRST SEMICONDUCTOR DEVICE THYRISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE SECOND SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |