| CURRENT RATING PER CHARACTERISTIC | 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER AND 10.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-218 |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE(S) |
| OVERALL HEIGHT | 0.182 INCHES NOMINAL |
| OVERALL LENGTH | 1.200 INCHES NOMINAL |
| OVERALL WIDTH | 0.551 INCHES MINIMUM AND 0.570 INCHES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | 113.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TERMINAL LENGTH | 0.470 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| TRANSFER RATIO | 30.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 900.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 10.0 NOMINAL EMITTER TO BASE VOLTAGE, DC AND 400.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 3.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE AND 1.4 MAXIMUM BASE TO EMITTER SATURATION VOLTAGE |