| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER AND TRANSIENT SUPPRESSOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-13 |
| OVERALL DIAMETER | 0.235 INCHES MAXIMUM |
| OVERALL LENGTH | 0.357 INCHES MAXIMUM |
| MATERIAL | GLASS ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR |
| MOUNTING METHOD | TERMINAL |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| POWER RATING PER CHARACTERISTIC | 1500.0 WATTS MAXIMUM PEAK OFF-STATE POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 14.7 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 1.625 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |