COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
TRANSFER RATIO | 0.9 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND |
| 1.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-99 |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.185 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |