| COMPONENT NAME AND QUANTITY | 7 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL HEIGHT | 0.095 INCHES MAXIMUM |
| OVERALL LENGTH | 0.300 INCHES NOMINAL |
| OVERALL WIDTH | 1.000 INCHES MAXIMUM |
| MATERIAL | CERAMIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/474 GOVERNMENT SPECIFICATION |
| TERMINAL TYPE AND QUANTITY | 14 PIN |
| TEST DATA DOCUMENT | 88818-A531A152 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |