5961-01-277-2620, SEMICONDUCTOR DEVICES,UNITIZED

National Stock Number:
5961-01-277-2620

Federal Supply Class:
5961

National Item Identification Number:
012772620

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

A3012715-1	31550	L3HARRIS TECHNOLOGIES, INC.
A3012715-1	80063	US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
RF2164	50998	M/A-COM TECHNOLOGY SOLUTIONS INC.

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	4.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR
OVERALL HEIGHT	0.240 INCHES MAXIMUM
OVERALL LENGTH	0.745 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL WIDTH	0.552 INCHES NOMINAL
MATERIAL	CERAMIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY	2
MOUNTING METHOD	UNTHREADED HOLE(S)
POWER RATING PER CHARACTERISTIC	20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
PRECIOUS MATERIAL	GOLD
PRECIOUS MATERIAL AND LOCATION	TERMINAL SURFACES GOLD
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
SPECIAL FEATURES	CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	65.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY	4 RIBBON
TEST DATA DOCUMENT	80063-A3012715 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)

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