| COMPONENT NAME AND QUANTITY | 24 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| INCLOSURE MATERIAL | METAL |
| OVERALL HEIGHT | 0.550 INCHES MAXIMUM |
| OVERALL LENGTH | 2.900 INCHES MAXIMUM |
| OVERALL WIDTH | 1.900 INCHES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 24.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 39.0 MAXIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 TURRET |