5961-01-231-9123, SEMICONDUCTOR DEVICES,UNITIZED

5961-01-231-9122 RECTIFIER,SEMICONDUCTORDEVICE

5961-01-231-9124 SEMICONDUCTOR DEVICE SET

National Stock Number:
5961-01-231-9123

Federal Supply Class:
5961

National Item Identification Number:
012319123

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

655365	4U884	RAYTHEON COMPANY
655365	82577	RAYTHEON COMPANY
CMA82100-600	19645	DATA DEVICE CORP
CCFJ102	21845	SOLITRON DEVICES, INC.

Techincal Specification:

COMPONENT NAME AND QUANTITY	4 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC	50.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED	RECTIFIER
OVERALL HEIGHT	0.430 INCHES NOMINAL
OVERALL LENGTH	1.500 INCHES NOMINAL
OVERALL WIDTH	1.005 INCHES NOMINAL
MATERIAL	CERAMIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY	6
MOUNTING METHOD	UNTHREADED HOLE(S)
POWER RATING PER CHARACTERISTIC	60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
PRECIOUS MATERIAL AND LOCATION	PLATED CASE GOLD
PRECIOUS MATERIAL	GOLD
SEMICONDUCTOR MATERIAL	SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES	CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	45.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY	8 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT	82577-655365 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)

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