| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 120.00 AMPERES SOURCE CUTOFF CURRENT PEAK ALL SEMICONDUCTOR DEVICE DIODE AND 10.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-220 |
| INCLOSURE MATERIAL | PLASTIC |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | UNTHREADED HOLE |
| OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| OVERALL LENGTH | 1.150 INCHES NOMINAL |
| OVERALL WIDTH | 0.420 INCHES MAXIMUM |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 36.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE AND 30.0 MAXIMUM REVERSE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |