| CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 30.00 NANOAMPERES NOMINAL COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-111 |
| OVERALL LENGTH | 0.970 INCHES MINIMUM AND 1.218 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.423 INCHES MINIMUM AND 0.438 INCHES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 1 |
| MOUNTING METHOD | THREADED STUD(S) |
| OVERALL DIAMETER | 0.505 INCHES NOMINAL |
| POWER RATING PER CHARACTERISTIC | 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| SPECIAL FEATURES | HIGH POWER SWITCHING TRANSISTOR; JUNCTION PATTERN ARRANGEMENT: NPN |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 WIRE HOOK |
| TRANSFER RATIO | 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 150.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |