| COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND |
| 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND |
| 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 0.75 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| CAPACITANCE RATING IN PICOFARADS | 10.0 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| RESPONSE TIME | 35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TRANSFER RATIO | 60.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.100 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 14 PIN |
| OVERALL LENGTH | 0.785 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
| OVERALL WIDTH | 0.015 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: NPN |