| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE THYRISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND |
| 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND |
| 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR |
| CURRENT RATING PER CHARACTERISTIC | 50.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT AND |
| 25.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND |
| 300.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE ALL SEMICONDUCTOR DEVICE THYRISTOR |
| POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND |
| 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION ALL SEMICONDUCTOR DEVICE THYRISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 3 SCREW |
| OVERALL LENGTH | 3.620 INCHES NOMINAL |
| OVERALL HEIGHT | 0.787 INCHES NOMINAL |
| OVERALL WIDTH | 1.417 INCHES NOMINAL |
| TEST DATA DOCUMENT | 10110-140195 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |