5961-01-121-7732, SEMICONDUCTOR DEVICES,UNITIZED

National Stock Number:
5961-01-121-7732

Federal Supply Class:
5961

National Item Identification Number:
011217732

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

6116809-1	03640	LOCKHEED MARTIN CORPORATION
FD1815	21845	SOLITRON DEVICES, INC.

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	1.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR1.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED	BURN IN AND BURN IN AND GOLD PLATED LEADS AND GOLD PLATED LEADS AND HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-71TO-71
OVERALL DIAMETER	0.209 INCHES MINIMUM AND 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM0.230 INCHES MAXIMUM
OVERALL LENGTH	0.170 INCHES MINIMUM AND 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM0.210 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINALTERMINAL
POWER RATING PER CHARACTERISTIC	300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
PRECIOUS MATERIAL AND LOCATION	TERMINAL SURFACES GOLDTERMINAL SURFACES GOLD
PRECIOUS MATERIAL	GOLDGOLD
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.100 INCHES NOMINAL0.100 INCHES NOMINAL
TERMINAL LENGTH	0.500 INCHES MINIMUM0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	6 UNINSULATED WIRE LEAD6 UNINSULATED WIRE LEAD

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