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National Stock Number:
5961-01-119-8257
Federal Supply Class:
5961
National Item Identification Number:
011198257
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 63SE123 | 21845 | SOLITRON DEVICES, INC. | | 63SE167 | 21845 | SOLITRON DEVICES, INC. | | SCA15091 | 34156 | OSI OPTOELECTRONICS, INC | | BACSH2P1 | 81205 | THE BOEING COMPANY | | BACSH2P2 | 81205 | THE BOEING COMPANY |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | -10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -4.00 AMPERES MAXIMUM BASE CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 1.050 INCHES MAXIMUM | | OVERALL LENGTH | 0.450 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING FACILITY QUANTITY | 2 | | MOUNTING METHOD | UNTHREADED HOLE(S) | | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED | | POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -5.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 UNINSULATED WIRE LEAD |
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