5961-01-117-9335, SEMICONDUCTOR DEVICES,UNITIZED

National Stock Number:
5961-01-117-9335

Federal Supply Class:
5961

National Item Identification Number:
011179335

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

723089-41	05869	RAYTHEON COMPANY
SD3137H	04713	FREESCALE SEMICONDUCTOR, INC.
ST1585	50891	SEMICONDUCTOR TECHNOLOGY, INC.

Techincal Specification:

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE	COLLECTORCOLLECTOR
COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
OVERALL DIAMETER	0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH	0.260 INCHES MAXIMUM0.260 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINALTERMINAL
SPECIAL FEATURES	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
POWER RATING PER CHARACTERISTIC	1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.200 INCHES NOMINAL0.200 INCHES NOMINAL
TERMINAL LENGTH	0.750 INCHES MAXIMUM0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY	6 UNINSULATED WIRE LEAD6 UNINSULATED WIRE LEAD
TRANSFER RATIO	175.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 175.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 600.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR600.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR

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