5961-01-113-1661, SEMICONDUCTOR DEVICES,UNITIZED

5961-01-113-1660 SEMICONDUCTOR DEVICE,DIODE

National Stock Number:
5961-01-113-1661

Federal Supply Class:
5961

National Item Identification Number:
011131661

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

22729-6200	14844	FREQUENCY ELECTRONICS INC
AD830	24355	ANALOG DEVICES, INC.
U421	17856	SILICONIX INCORPORATED
MP830	54186	MICRO POWER SYSTEMS INC
MPS-830	54186	MICRO POWER SYSTEMS INC
U421	66182	INTERFET CORPORATION

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	10.00 MICROAMPERES MAXIMUM GATE CURRENT AND 10.00 MICROAMPERES MAXIMUM GATE CURRENT AND 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-78TO-78
OVERALL DIAMETER	0.335 INCHES MINIMUM AND 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH	0.165 INCHES MINIMUM AND 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM0.185 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION150.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINALTERMINAL
POWER RATING PER CHARACTERISTIC	40.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR40.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.5 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE ALL TRANSISTOR4.5 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.200 INCHES NOMINAL0.200 INCHES NOMINAL
TERMINAL LENGTH	0.500 INCHES MINIMUM0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	8 UNINSULATED WIRE LEAD8 UNINSULATED WIRE LEAD

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