| COMPONENT NAME AND QUANTITY | 16 SEMICONDUCTOR DEVICE DIODE16 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| OVERALL HEIGHT | 0.200 INCHES NOMINAL0.200 INCHES NOMINAL |
| OVERALL LENGTH | 0.570 INCHES NOMINAL0.570 INCHES NOMINAL |
| OVERALL WIDTH | 0.300 INCHES NOMINAL0.300 INCHES NOMINAL |
| MATERIAL | CERAMIC AND PLASTIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR150.0 CELSIUS AMBIENT AIR |
| MOUNTING METHOD | PRESS FITPRESS FIT |
| SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PNALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| POWER RATING PER CHARACTERISTIC | 700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE700.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODESILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE65.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 10 RIBBON10 RIBBON |