5961-01-107-2115, SEMICONDUCTOR DEVICES,UNITIZED

5999-01-107-2114 MOUNTING PAD,ELECTRICAL-ELECTRON

7050-01-107-2116 CONVERTER,ANALOG TO DIGITAL

National Stock Number:
5961-01-107-2115

Federal Supply Class:
5961

National Item Identification Number:
011072115

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

6010288-002	12436	BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
DN1676	17856	SILICONIX INCORPORATED
DPAD1-2	17856	SILICONIX INCORPORATED

Techincal Specification:

COMPONENT NAME AND QUANTITY	2 TRANSISTOR2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL TRANSISTOR50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
OVERALL DIAMETER	0.370 INCHES MAXIMUM0.370 INCHES MAXIMUM
OVERALL LENGTH	0.185 INCHES MAXIMUM0.185 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION125.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINALTERMINAL
SPECIAL FEATURES	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
POWER RATING PER CHARACTERISTIC	400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
PRECIOUS MATERIAL AND LOCATION	LEADS GOLDLEADS GOLD
PRECIOUS MATERIAL	GOLDGOLD
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL TRANSISTOR-45.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER	0.100 INCHES NOMINAL0.100 INCHES NOMINAL
TERMINAL LENGTH	0.500 INCHES MINIMUM0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY	5 UNINSULATED WIRE LEAD5 UNINSULATED WIRE LEAD

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